c opyright ruich ips semiconductor co . , ltd rev . a C dec ., 2011 www. rui chips .com ru 60e25 r n - channel advanced power mosfet mosfet features pin description applications symbol parameter rating unit common ratings ( t c =25 c unless otherwise noted) v dss drain - source voltage 6 0 v gss gate - source voltage 2 0 v t j maximum junction temperature 175 c t stg storage temperature range - 55 to 175 c i s diode continuous forward current t c =25 c 25 a mounted on large heat sink i d p 300 s pulse drain current tested t c =25 c 1 0 0 a t c =25 c 25 i d continuous drain current ( v gs =10v) t c =100 c 20 a t c =25 c 54 w p d maximum power dissipation t c = 100 c 27 w r q jc thermal resistance - junction to case 2 .8 c /w drain - source avalanche ratings e as avalanche energy, single pulsed 42 m j ? 6 0 v/ 25 a, r ds ( on ) = 3 5 m ( tpy.)@ v gs =10v ? super high dense cell design ? esd protected ? 100% avalanche tested ? lead free and green devices available ( rohs compliant) ? power management absolute maximum ratings n - channel mosfe t to - 220
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 2 www. ruichips .com ru 60e25 r electrical characteristics ( t c =25 c unless otherwise noted) ru 60e25 r symbol parameter test condition min. typ. max. unit static characteristics bv dss drain - s ource breakdown voltage v gs =0v, i ds =250 m a 6 0 v v ds = 6 0 v, v gs =0v 1 i dss zero gate voltage drain current t j =85 c 3 0 m a v gs ( th) gate threshold voltage v ds =v gs , i ds =250 m a 2 3 4 v i gss gate leakage current v gs = 16 v, v ds =0v 10 0 n a r ds ( on ) drain - source on - state resistance v gs = 10 v, i ds = 25 a 3 5 50 m w notes : calculated continuous current based on maximum allowable junction temperature . pulse width limited by safe operating area. limited by t jmax , i as = 13 a, v dd = 48 v, r g = 50 , starting t j = 25c . pulse test ; p ulse width 3 00 m s, d uty cycle 2% . guaranteed by design, not subject to production testing . d iode characteristics v sd diode forward voltage i sd = 2 5 a, v gs =0v 1. 2 v t rr reverse recovery time 40 ns q rr reverse recovery charge i sd = 2 5 a, dl sd /dt=100a/ m s 70 nc dynamic charact eristics r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz 1.8 w c iss input capacitance 1340 c oss output capacitance 2 8 5 c rss reverse transfer capacitance v gs =0v, v ds = 3 0 v, frequency=1.0mhz 90 pf t d ( on ) turn - on delay time 10 t r turn - on rise time 1 3 t d ( off ) turn - off delay time 28 t f turn - off fall time v dd = 3 0 v, r l = 30 w , i ds = 2 5 a, v gen = 10v, r g = 6 w 15 ns gate charge characteristics q g total gate charge 5 5 q gs gate - source charge 8 q gd gate - drain cha rge v ds = 48 v, v gs = 10v, i ds = 2 5 a 28 nc
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 3 www. ruichips .com ru 60e25 r typical characteristics power dissipation drain current p tot - power ( w) i d - drain current (a) t j - junction temperature ( c) t j - junction temperature ( c) safe operation area thermal transient impedance i d - drain current (a) normalized effective transient v ds - drain - source voltage (v) square wave pulse duration ( sec)
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 4 www. ruichips .com ru 60e25 r typical characteristics output characteristics drain - source on resistance i d - drain current (a) r ds(on) - on resistance ( m ) v ds - drain - source voltage (v) i d - drain current (a) drain - source on resistance gate threshold voltage r ds ( on ) - on - resistance (m ? ) normalized threshold voltage v gs - gate - source voltage (v) t j - junction temperature (c)
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 5 www. ruichips .com ru 60e25 r typical characteristics drain - source on resistance source - drain diode forward normalized on resistance i s - source current (a) t j - junction temp erature (c) v sd - source - drain voltage (v) capacitance gate charge c - capacitance ( pf ) v gs - gate - source voltage (v) v ds - drain - source voltage (v) q g - gate charge (nc)
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 6 www. ruichips .com ru 60e25 r avalanche test circuit and waveforms switching time test circuit and waveforms
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 7 www. ruichips .com ru 60e25 r ordering and marking information device marking package packaging quantity reel size tape width ru 60e25 r ru 60e25 r to - 220 tube 50 - -
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 8 www. ruichips .com ru 60e25 r package information to - 220fb - 3l all dimensions refer to jedec standard do not include mold flash or protrusions mm inch mm inch symbol min nom max min nom max symbol min nom max min nom max a 4.40 4.57 4.70 0.173 0.180 0.185 ?p1 1.40 1.50 1.60 0.055 0.059 0.063 a1 1.27 1.30 1.33 0.050 0 .051 0.052 e 2.54bsc 0.1bsc a2 2.35 2.40 2.50 0.093 0.094 0.098 e1 5.08bsc 0.2bsc b 0.77 - 0.90 0.030 - 0.035 h1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 l 12.75 - 13.17 0.502 - 0.519 c 0.48 0.50 0.52 0.019 0.020 0.021 l1 - - 3.95 - - 0.156 d 15.40 15.60 15.80 0.606 0.614 0.622 l2 2.50ref . 0.098ref . d1 9.00 9.10 9.20 0.354 0.358 0.362 ?p 3.57 3.60 3.63 0.141 0.142 0.143 dep 0.05 0.10 0.20 0.002 0.004 0.008 q 2.73 2.80 2.87 0.107 0.110 0.113 e 9.70 9.90 10.10 0.382 0.389 0.398 1 5 7 9 5 7 9 e 1 - 8.70 - - 0.343 - 2 1 3 5 1 3 5 e 2 9.80 10.00 10.20 0.386 0.394 0.401
c opyright ruichips semiconductor co . , ltd rev . a C dec ., 2011 9 www. ruichips .com ru 60e25 r customer service worldwide sales and service : sales@ru i c hips.com technical s upport : technical@ruichips.com investor relations contacts : investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact : editorial@ruichips.com hr conta c t: hr@ruichips. com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial bui l ding, n o.207 mei hua road fu tian area shen zhen city , chi na tel: ( 86 - 755) 8311 - 5334 f ax : (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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